PART |
Description |
Maker |
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM 65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group SONY
|
HM62864 |
65536-word 8-bit High Speed CMOS Static RAM 65536-word 8-bit High Speed CMOS Static RAM 65536-word ? 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc. ETC
|
CXK58512TM/M-10LL CXK58512TM/M-55LL CXK58512TM/M-7 |
65536-word x 8-bit High Speed CMOS Static RAM 65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
CXK5V16100TM-10LLX CXK5V16100TM-85LLX CXK5V16100TM |
128 x 64 pixel format, LED Backlight available 65536-word X 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
HM6287P-45 HM6287P-55 HM6287LP-45 HM6287LP-55 HM62 |
65536-word x 1-bit Speed CMOS Static RMA
|
http:// HITACHI[Hitachi Semiconductor]
|
M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM From old datasheet system 1048576-1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system 1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MX566AJCWG MX566AJD MX566AJN MX566AJQ MX566AKCWG M |
(MX565A / MX566A) High Speed 12-Bit Monolithic D/A Converters JT 8C 8#16 SKT WALL RECP 高2位单D / A转换 High Speed 12-Bit Monolithic D/A Converters PARALLEL, WORD INPUT LOADING, 0.15 us SETTLING TIME, 12-BIT DAC, PDSO24
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
|
M5M51016BRT-12VL M5M51016BRT-12VLL M5M51016BTP-12V |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system 1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
HI586008 HI5860IA HI5860SOICEVAL1 HI5860IA-T |
12-Bit, 130 MSPS, High Speed D/A Converter; Temperature Range: -40°C to 85°C; Package: 28-TSSOP T&R PARALLEL, WORD INPUT LOADING, 0.035 us SETTLING TIME, 12-BIT DAC, PDSO28 12-Bit, 130MSPS, High Speed D/A Converter
|
Intersil, Corp. Intersil Corporation
|