| PART |
Description |
Maker |
| 1.4KESD48A 1.4KESD48AE3 1.4KESD48E3 1.4KESD43A 1.4 |
AXIAL-LEAD TVS
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 110; VC (V): 243; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 24.7; ID (µA): 1; Tol (%): 5;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 21.1; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 120; VC (V): 267; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 12; VC (V): 28; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 110; VC (V): 213; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 11; VC (V): 27.1; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10; 1400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
Microsemi Corporation
|
| PH1214-100EL |
1200-1400 MHz,100 W, 2 ms pulse,radar pulsed power transistor
|
MA-Com
|
| CM75TF-28H |
Six-IGBT IGBTMOD 75 Amperes/1400 Volts 75 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| M58657P |
1400-BIT(100-WORD BY 14-BIT) ELECTRICALLY ALTERABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| ESC-2-1TR |
E-Series 2-Way 0Power Divider 0.1400 MHz E系列2？功分器0.1400兆赫
E-Series 2-Way 0?Power Divider 0.1400 MHz
|
Abracon, Corp.
|
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| HUF75339S3S HUF75339P3 HUF75339G3 FN4363 |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管)
75A 55V 0.012 Ohm N-Channel UltraFET Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RHRG75120 FN3414 |
75A/ 1200V Hyperfast Diode
75A, 1200V Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STB75NF75LT4 STB75NF75L07 STB75NF75L |
N-channel 75V - 0.009Ω - 75A - D2PAK STripFET II Power MOSFET
N-channel 75V - 0.009ヘ - 75A - D2PAK STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| STB75NH02L STB75NH02LT4 |
N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET III POWER MOSFET
N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET⑩ III POWER MOSFET
N-CHANNEL 24V 0.0062 OHM 75A D2PAK STRIPFET III POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
