| PART |
Description |
Maker |
| FQH8N100C |
N-Channel QFETMOSFET 1000V, 8.0A, 1.45
1000V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRFMG50 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)
|
International Rectifier
|
| STF3NK100Z STP3NK100Z STD3NK100Z |
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
N-channel 1000 V, 5.4 Ohm, 2.5 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH?/a> Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| IRFBG20 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| FQA8N100C |
1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFMG40 |
POWER MOSFET THRU-HOLE 1000V, N-CHANNEL
|
IRF[International Rectifier]
|
| STW8NB100 |
N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
|
SGS Thomson Microelectronics
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| IRFPG40 |
4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| IRFNG50 |
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
|
International Rectifier
|
