| PART |
Description |
Maker |
| STK10C68-L45M STK10C68-L55M |
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| DS1249Y-70 DS1249Y-100-IND DS1249Y-70-IND DS1249AB |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1745Y-150-IND DS1745YLPM-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1630Y-70-IND DS1630Y-100-IND DS1630Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Coilcraft, Inc.
Omron Electronics, LLC
|
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| DS1330ABL-70-IND DS1330ABL-100-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Samtec, Inc.
Ramtron International, Corp.
|
| DS1646-120 DS1646P-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中（基于电池
IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M41T56C64MY6F |
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM
|
意法半导
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| X24012SG-3 X24012SG-2.7 X24012SIG-3 X24012SMG ICMI |
TRIAC,TMG10C60,10A,600V TO-220AB,THRUHOLE NON-ISOLATED
Serial E2PROM
TRIAC,TMG10D60,10A,600V TO-220AB,THRUHOLE NON-ISOLATED 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
TRIAC,TMG12C80,12A,800V TO-220AB,THRUHOLE NON-ISOLATED 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
IC MICROSYSTEMS Sdn. Bhd.
Sharp, Corp.
|
