| PART |
Description |
Maker |
| G120C G105C G270C G220C G240C |
SIDACs
|
EIC discrete Semiconductors
|
| MKP3V120 MKP3V130 MKP3V110 |
SIDACs 1 AMPERE RMS 100 thru 135 VOLTS
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| K1400Y K1300Y K2000Y K2000F23 K1200Y K1800Y K2400Y |
Teccor? brand Thyristors Standard Bidirectional SIDACs
|
Littelfuse
|
| U4090B-PFNY |
Monolithic Integrated Feature Phone Circuit EMI Improved
IC MONO FEATURE PHONE EMI 44SSOP TELEPHONE MULTIFUNCTION CKT, PDSO44
|
http://
ATM Electronic, Corp.
|
| STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N-CHANNEL Power MOSFET
PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| STB60NE06-1 STB60NE06-16 5572 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STG3680 STG3680QTR |
LOW VOLTAGE 5OHM MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
LOW VOLTAGE 0.5/0.8OHM MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 34C7570 |
EDU BRD II FULL FEATURE 埃杜核苷二全部功
|
Vishay Intertechnology, Inc.
|
| ISD61S00 |
ChipCorder Telephony Feature Chip
|
Nuvoton Technology
|
| SPN03N60C3 SPN03N60C305 |
Cool MOS Power Transistor Feature
|
Infineon Technologies AG
|
