| PART |
Description |
Maker |
| KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16）的CMOS掩模ROM分位512Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BM29F400B |
5-Volt Flash 256Kx16/512Kx8
|
Winbond Electronics
|
| AT49BV4096A-12RC |
EEPROM,FLASH,256KX16/512KX8,CMOS,SOP,44PIN,PLASTIC
From old datasheet system
|
Atmel Corp
|
| BM29F040 |
5-Volt Flash 512Kx8
|
Winbond Electronics
|
| KM23C4100DET KM23C4100DT |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
http://
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
| MX29F004BQC-70 MX29F004BQC-12 MX29F004BQC-90 MX29F |
x8 Flash EEPROM
4M-BIT [512KX8] CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
| AT49F008A AT49F008A-90TI AT49F8192AT-90TC AT49F819 |
x8/x16 Flash EEPROM
x8 Flash EEPROM
From old datasheet system
8M bit, 5-Volt Read and 5-Volt Byte-Write Flash
|
Atmel Corp
|
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
8 Megabit (1M x 8), 5 Volt-only, Flash Memory
IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC
From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
