PART |
Description |
Maker |
AM29F080 AM29F080-85FC |
Am29F080 - 8 Megabit (1.048.576 x 8-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory Am29F080 - 8兆(1.048.576 × 8位)的CMOS 5.0伏特只。扇区擦除闪 1M X 8 FLASH 5V PROM, 85 ns, PDSO40
|
Laird Technologies, Inc. SPANSION LLC
|
AM29LV800B-100 AM29LV800B-150 AM29LV800B-90R AM29L |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory
|
Advanced Micro Devices
|
S29GL016A S29GL016A100BAI010 S29GL016A100BAI012 S2 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
|
MSM514400E-60SJ MSM514400E-60TS-K MSM514400EL-XXTS |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器:快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets]
|
TC514402J TC514402J-10 TC514402J-80 TC514402Z-10 T |
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器 MB 3C 3#16 PIN RECP 1,048,576 × 4位动态随机存储器 MB 10C 10#20 PIN RECP 1,048,576 × 4位动态随机存储器
|
Toshiba, Corp. Maxim Integrated Products, Inc. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
THM401020SG-80 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDSx40位动态RAM模块 1,048,576 WORDSx40 BIT DYNAMIC RAM MODULE 1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HM514400ALT-7 HM514400ALZ-6 HM514400ALZ-8 HM514400 |
JT 42C 42#22 SKT WALL RECP 1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576字4位动态随机存储器 LJT 37C 37#22D SKT RECP
|
Hitachi,Ltd.
|
MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM) 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM) 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns. High speed 1 Megabit monolithic FLASH. Speed 90ns. High speed 1 Megabit monolithic FLASH. Speed 70ns. ACT-F128K8 High Speed 1 Megabit Monolithic FLASH High speed 1 Megabit monolithic FLASH. Speed 60ns. High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
GM71C4400ELJ-80 GM71C4400E-80 GM71C4400E-60 GM71C4 |
Replaced by TPS79630,REG104-A : Single Output LDO, 1.0A, Fixed(3.0V), Low Noise, Fast Transient Response 5-DDPAK/TO-263 Single Output LDO, 1.0A, Fixed(3.3V), Low Noise, Fast Transient Response 5-DDPAK/TO-263 1,048,576字×位组织 1,048,576 Words x Bit Organization 1,048,576字×位组织
|
LG Corp. LG, Corp.
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