PART |
Description |
Maker |
XU1006-QB-0L00 XU1006-QB-0L0T XU1006-QB-EV1 |
36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 36.0-42.0 GHz的砷化镓变送器QFN封装,为7x7 mm 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm SPECIALTY TELECOM CIRCUIT, QCC28
|
Mimix Broadband, Inc.
|
HMC361 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 11.0 GHz From old datasheet system Prescaler 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs HBT MMIC DIVIDE-BY-2/ DC - 11.0 GHz
|
Hittite Microwave Corpo... HITTITE[Hittite Microwave Corporation] 美国讯泰微波有限公司上海代表
|
TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
HMMC-3108 HMMC-3108-BLK HMMC-3108-TR1 |
HMMC-3108 · SO-8 SMT 0.5-16 GHz GaAs HBT prescalers DC-16 GHz Packaged Divide-by-8
|
Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
|
UPG2185T6R-E2 UPG2185T6R-E2-A |
GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
|
Renesas Electronics Corporation
|
HMC546LP2ETR 110782-HMC546LP2 |
10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz
|
Analog Devices
|
AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306:PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
XD1005-QT-EV1 XD1005-QT-0G00 MIMIXBROADBANDINC.-XD |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10.0-40.0千兆赫的GaAs MMIC分布式放大器QFN封装
|
Mimix Broadband, Inc.
|
AA028N1-00 |
240 GHz GaAs MMIC Low Noise Amplifier GT 14C 10#12 4#16 PIN PLUG 24-30 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries Inc Alpha Industries, Inc. ALPHA[Alpha Industries] http://
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