| PART |
Description |
Maker |
| UPD65701 UPD65702 UPD65703 UPD65704 UPD65705 UPD65 |
ISSP employing 0.15um process(ISSP-STD series)
|
NEC
|
| UPD65530 UPD65531 UPD65345S1-XXX-6C UPD65349S1-XXX |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD)
|
NEC
|
| VTB5041 VTB5040 |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极
VTB Process Photo Diodes
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Perkin Elmer Optoelectronics
|
| RN4603 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| RN4605 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 8230-90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-5 |
Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:690MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded Process Compatible:Yes
Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded Process Compatible:Yes
Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:90MHz; Core Material:Iron; Leaded Process Compatible:Yes
|
Bourns, Inc.
BOURNS INC
|
| RN4911 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| RN4988 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA
|
| RN1903 RN1906 RN1901 RN1902 RN1904 RN1905 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
LED 5X5MM SQR RED DIFF PANEL MT 东芝npn型晶体管硅外延型（厘进程
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| RN4906 |
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN460407 RN4604 |
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
