| PART |
Description |
Maker |
| MGFS48V2527_04 MGFS48V2527 MGFS48V252704 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7177A C367177A |
From old datasheet system
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| LT5522EUF LT5522EUFTR |
600MHz to 2.7GHz High Signal Level Downconverting Mixer; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 125°C TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16
400MHz to 2.7GHz High Signal Level Downconverting Mixer
|
Linear Technology, Corp.
|
| SZP-2026Z |
2.2-2.7GHz 2W InGaP Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
| SY87724LEHI SY87724LEHY |
3.3V AnyRate? MUX/DEMUX Up to 2.7GHz
|
Micrel Semiconductor
|
| HFA3664 HFA3664IA HFA3664IA96 |
2.7GHz UpConverter with Gain Control
|
INTERSIL[Intersil Corporation]
|
| AD8362 |
50Hz to 2.7GHz, 60dB TruPwrDETECTOR
|
Analog Devices
|
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
