| PART |
Description |
Maker |
| CLY2 |
High Power Packaged GaAs FET; 23.5 dBm
|
TriQuint Semiconductor
|
| PS7122A-2A PS7122A-1A PS7122AL-1A PS7122AL-1A-E4 P |
OCMOS FET
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package; A IR2308 packaged in a 8-Lead SOIC
Dual Low Side Driver, Inverting Input in a 8-pin DIP package; A IR4426 packaged in a 8-Lead SOIC
1200V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package; A IR2214 packaged in a Lead-Free 24 Lead SSOP
FET-OUTPUT OPTOCOUPLER
Single High Side Driver, Current Limiting, Programmable Shutdown Error Pin in a 8-pin DIP package; A IR2125 packaged in a Lead-Free 16-Lead SOIC shipped on Tape and Reel
Half Bridge Driver, Single Input Plus Inverting Shutdown Pin, Fixed 520ns Deadtime in a 8-pin DIP package; A IR2104 packaged in a Lead-Free 8-Lead PDIP
OCMOS场效应管
Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器) 光纤耦合场效应晶体管光电耦合器（简称MOS场效应管输出光光隔离器
|
NEC, Corp.
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PB-CMM0511-QT-0000 CMM0511-QT-0G0T CMM0511-QT-0G00 |
5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier 5.0-14.0 GHz的砷化镓微波单片集成电路封装驱动放大
5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier 5000 MHz - 14000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Mimix Broadband, Inc.
ATM Electronic, Corp.
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| PS7122AL-2B-E3 PS7122AL-1B-E4 PS7122AL-1B-E3 PS712 |
3 Phase Driver, Separate High and Low Side Inputs, Overcurrent Comparator, Latching Fault Logic, Fault Clear Input, Synchronized Shutdown Input, 200ns Deadtime in a 28-pin DIP package; A IR2233 packaged in a 28-Lead PDIP
FET-OUTPUT OPTOCOUPLER
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-pin DIP package; A IR21064 packaged in a 14-Lead SOIC
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-pin DIP package; A IR21064 packaged in a 14-Lead PDIP
Half Bridge Driver, Single Input Plus Inverting Shutdown Pin, Fixed 520ns Deadtime in a 8-pin DIP package; A IR2104 packaged in a Lead-Free 8-Lead SOIC
Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器)
场效应管输出光耦合
3 Phase Driver, Separate High and Low Side Inputs, Overcurrent Comparator, Latching Fault Logic, Fault Clear Input, Synchronized Shutdown Input, 200ns Deadtime in a 28-pin DIP package; A IR2235 packaged in a 28-Lead PDIP
Dual Low Side Driver, Inverting Input in a 8-pin DIP package; A IR4426 packaged in a 8-Lead PDIP
|
NEC Corp.
Atmel, Corp.
NEC, Corp.
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL800IQ-2C |
L-Band High Power GaAs FET
|
etc
List of Unclassifed Manufacturers
|
| FLL21E090IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
