Part Number Hot Search : 
2SC1913A TB0883A BAS85 NTC212 NJM2370R TN2640 MAU153 SC1565
Product Description
Full Text Search

CLY2 - High Power Packaged GaAs FET; 23.5 dBm

CLY2_959834.PDF Datasheet

 
Part No. CLY2
Description High Power Packaged GaAs FET; 23.5 dBm

File Size 116.32K  /  9 Page  

Maker


TriQuint Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: CLY2
Maker: SIEMENS
Pack: MW6
Stock: Reserved
Unit price for :
    50: $0.52
  100: $0.49
1000: $0.47

Email: oulindz@gmail.com

Contact us

Homepage http://www.triquint.com
Download [ ]
[ CLY2 Datasheet PDF Downlaod from Datasheet.HK ]
[CLY2 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for CLY2 ]

[ Price & Availability of CLY2 by FindChips.com ]

 Full text search : High Power Packaged GaAs FET; 23.5 dBm


 Related Part Number
PART Description Maker
PS7122A-2A PS7122A-1A PS7122AL-1A PS7122AL-1A-E4 P OCMOS FET
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package; A IR2308 packaged in a 8-Lead SOIC
Dual Low Side Driver, Inverting Input in a 8-pin DIP package; A IR4426 packaged in a 8-Lead SOIC
1200V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package; A IR2214 packaged in a Lead-Free 24 Lead SSOP
FET-OUTPUT OPTOCOUPLER
Single High Side Driver, Current Limiting, Programmable Shutdown Error Pin in a 8-pin DIP package; A IR2125 packaged in a Lead-Free 16-Lead SOIC shipped on Tape and Reel
Half Bridge Driver, Single Input Plus Inverting Shutdown Pin, Fixed 520ns Deadtime in a 8-pin DIP package; A IR2104 packaged in a Lead-Free 8-Lead PDIP
OCMOS场效应管
Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器) 光纤耦合场效应晶体管光电耦合器(简称MOS场效应管输出光光隔离器
NEC, Corp.
MGF0909A MGF0909 0909A MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
MGF0910A 0910A MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
PB-CMM0511-QT-0000 CMM0511-QT-0G0T CMM0511-QT-0G00 5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier 5.0-14.0 GHz的砷化镓微波单片集成电路封装驱动放大
5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier 5000 MHz - 14000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Mimix Broadband, Inc.
ATM Electronic, Corp.
MGF0905A MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
Mitsubishi Electric Corporation
FLL21E090IY L,S-band High Power GaAs FET
Eudyna Devices Inc
FLL400IK-2 High Voltage - High Power GaAs FET
Eudyna Devices Inc
FLL21E180IU High Voltage - High Power GaAs FET
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
FLL21E180IU High Voltage - High Power GaAs FET
Eudyna Devices Inc
FLL21E010MK High Voltage - High Power GaAs FET
Eudyna Devices Inc
 
 Related keyword From Full Text Search System
CLY2 enhancement CLY2 quad CLY2 suply voltase IC CLY2 Controller CLY2 receptacle
CLY2 Characteristic CLY2 semicon CLY2 IC在线 CLY2 transistor CLY2 Switch
 

 

Price & Availability of CLY2

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.26882290840149