| PART |
Description |
Maker |
| EP4SGX110DF29C4 EP4SGX110DF29I4N EP4SGX110DF29C2X |
FPGA, 4224 CLBS, 717 MHz, PBGA780 29 X 29 MM, FBGA-780
FPGA, 4224 CLBS, 717 MHz, PBGA780 29 X 29 MM, LEAD FREE, FBGA-780
FPGA, 4224 CLBS, 800 MHz, PBGA780 29 X 29 MM, FBGA-780
FPGA, 11648 CLBS, 800 MHz, PBGA1932 45 X 45 MM, FBGA-1932
FPGA, 11648 CLBS, 717 MHz, PBGA1932 45 X 45 MM, FBGA-1932
FPGA, 2904 CLBS, 717 MHz, PBGA780 29 X 29 MM, LEAD FREE, FBGA-780
FPGA, 7030 CLBS, 717 MHz, PBGA1152 35 X 35 MM, LEAD FREE, FBGA-1152
FPGA, 7030 CLBS, 717 MHz, PBGA1152 35 X 35 MM, FBGA-1152
|
Altera International Limited
|
| K4M56163PG K4M56163PG-BC75 K4M56163PG-BC90 K4M5616 |
4M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Ironwood Electronics
Bel Fuse, Inc.
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| ST2L05R3315K5 ST2L05R1833PT ST2L05R2833PS ST2L05R3 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,14A I(D),LLCC RoHS Compliant: Yes
ER 1C 1#4 SKT PLUG
ER 3C 2#16 1#0 SKT PLUG
VERY LOW QUIESCENT CURRENT DUAL VOLTAGE REGULATOR 极低的静态电流双电压调节
Cyclone II FPGA 8K FBGA-256 极低的静态电流双电压调节
Stratix FPGA 80K FBGA-1508 极低的静态电流双电压调节
CYCLONE III FPGA 10K 144-EQFP 极低的静态电流双电压调节
Stratix II GX FPGA 30K FPGA-780 极低的静态电流双电压调节
|
意法半导
STMicroelectronics N.V.
|
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| V23100S2234A840 V23100S0302A303 V23100S2034A840 V2 |
FPGA IGLOOe Family 3M Gates 892.86MHz Commercial 130nm (CMOS) Technology 1.5V 484-Pin FBGA
FPGA IGLOOe Family 3M Gates Commercial 130nm (CMOS) Technology 1.5V 484-Pin FBGA
FPGA IGLOOe Family 3M Gates 892.86MHz Industrial 130nm (CMOS) Technology 1.5V 484-Pin FBGA
FPGA IGLOOe Family 3M Gates Commercial 130nm (CMOS) Technology 1.5V 896-Pin FBGA
FPGA IGLOOe Family 3M Gates 892.86MHz Industrial 130nm (CMOS) Technology 1.5V 896-Pin FBGA
FPGA ProASIC®3 Family 1M Gates 272MHz Industrial 130nm (CMOS) Technology 1.5V 256-Pin FBGA
FPGA ProASIC®3 Family 1M Gates 272MHz Industrial 130nm (CMOS) Technology 1.5V 484-Pin FBGA
|
Cypress Semiconductor, Corp.
EPCOS AG
|
| K4H560438E-ZLB30 K4H560838E-ZLB30 |
64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
|
Samsung Semiconductor Co., Ltd.
|
| CYD04S18V18-250BBXC CYD18S18V18-200BBXC CYD18S18V1 |
256K X 18 DUAL-PORT SRAM, 7.2 ns, PBGA256 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256
1M X 18 DUAL-PORT SRAM, 9 ns, PBGA256 19 X 19 MM, 1.70 MM HEIGHT, 1 MM PITCH, LEAD FREE, FBGA-256
1M X 18 DUAL-PORT SRAM, 11 ns, PBGA256 19 X 19 MM, 1.70 MM HEIGHT, 1 MM PITCH, LEAD FREE, FBGA-256
|
Cypress Semiconductor, Corp.
|
| CYK512K16SCAU-55BAXI CYK512K16SCAU-70BAXI CYK512K1 |
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, FBGA-48
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, MO-207, FBGA-48
512K X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, MO-207, FBGA-48
8-Mbit (512K x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
| ST491A ST491ABD ST491ABDR ST491ABN ST491ACD ST491A |
LOW POWER HIGH SPEED RS-485/RS422 TRANSCEIVER
MAX II CPLD 2210 LE 324-FBGA
MAX II CPLD 2210 LE 256-FBGA
LOW POWER HIGH SPEED RS-485/RS-422 TRANSCEIVER 低电源高RS-485/RS-422收发
IC SW OFFLINE 68W/117W TO262-7 低电源高速RS-485/RS-422收发
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| CY7C1528V18-167BZC CY7C1528V18-167BZI CY7C1528V18- |
8M X 9 DDR SRAM, 0.5 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
8M X 9 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
|
