| PART |
Description |
Maker |
| RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
40A 100V 0.040 Ohm N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HD06 HD04 HD01 HD02 |
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:40A; Voltage
TRIAC,200V V(DRM),25A I(T)RMS,TO-220
TRIAC-600VRM-25A-TO220
|
DIODES[Diodes Incorporated]
Diodes Inc.
|
| CP-SNT55W |
Swi tchmode power suppl ies 瑞东tchmode权力suppl载体
|
Electronic Theatre Controls, Inc.
|
| 1N1188A 1N1190A 1N1186A 1N1186 1N1186RA |
400V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
600V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
200V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
200V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
|
International Rectifier
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| STP3015L STB3015 STB3015L 6057 |
From old datasheet system
N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| MJL3281A MJL1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistor
Power 15A 200V PNP
|
ON Semiconductor
|
| IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|
| AZ987 AZ987-1C-10DE AZ987-1C-12DE AZ987-1A-10DE AZ |
CAP 27PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 30放大器微型功率继电器用于汽车
CAP 33PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
CAP 22PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
30 AMP SUBMINIATURE POWER RELAY FOR AUTOMOTIVE USE
From old datasheet system
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
ETC[ETC]
ZETTLER electronics
|
| IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|4A（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
|
International Rectifier, Corp.
Fairchild Semiconductor
IRF[International Rectifier]
|
