| PART |
Description |
Maker |
| GT20J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
|
TOSHIBA
|
| GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
TOSHIBA
|
| GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| TC55257CFTL TC55257CFL-10 TC55257CFL-70 TC55257CPL |
SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
(TC55257xxx) Silicon Gate CMOS
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 74ABT02PWDH 74ABT02 74ABT02D 74ABT02DB 74ABT02N 74 |
Quad 2-input NOR gate ABT SERIES, QUAD 2-INPUT NOR GATE, PDSO14
Quad 2-input NOR gate - Description: Quad 2-Input NOR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.4 ns; Voltage: 4.5-5.5 V ABT SERIES, QUAD 2-INPUT NOR GATE, PDSO14
|
Atmel, Corp.
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT15J331 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT5J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
TOSHIBA
|
