| PART |
Description |
Maker |
| MGFC38V5867 |
5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V2228 |
12.2-12.8 GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK38V2228 |
12.2-12.8 GHz BAND 6W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V7785A |
7.7-8.5 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7785A |
7.7-8.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V4450A |
4.4-5.0 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
