| PART |
Description |
Maker |
| PBSS5230T PBSS5220T PBSS5220T215 |
20V, 2A PNP low VCEsat (BISS) transistor
20 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| FST71100SM FST7135SM FST7160SM FST7180SM FST7120SM |
70A, 20V ultra fast recovery rectifier
70 Amp Rectifier 20 to 100 Volts Schottky Barrier
MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1;
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
| PBSS5120T PBSS5120T215 |
20 V; 1 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd
20 V, 1 A PNP low VCEsat (BISS) transistor
20 V 1 A PNP low VCEsat (BISS) transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| ALD521DSD ALD521D ALD521DPD |
MOSFET, P POWERPAKMOSFET, P POWERPAK; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:50A; Power, Pd:1.8W; Resistance, Rds on:0.0085R; SMD:1;
24 BIT SERIAL INTERFACE DIGITAL CONTROLLER
|
Advanced Linear Devices, Inc.
ALD[Advanced Linear Devices]
|
| IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN41 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STT2PF60L |
P-CHANNEL 60V - 0.20 OHM 2A SOT23-6L STRIPFET II POWER MOSFET
P-CHANNEL 60V - 0.20 ohm - 2A SOT23-6L STripFET II POWER MOSFET
P-CHANNEL 60V - 0.20 ohm - 2A SOT23-6L STripFET⑩ II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRF7N1405 |
55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)
|
International Rectifier
|
| PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| IRHNJ57133SE |
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package
TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 20A I(D) | SMT
|
International Rectifier
|
| ZXMN6A07F ZXMN6A07FTA UZXMN6A07FTA ZXMN6A07F07 |
1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
60V SOT23 N-channel enhancement mode mosfet
|
Zetex Semiconductors
Diodes Incorporated
|
| FMMT597 FMMT597TA |
SOT23 PNP SILICON PLANAR
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
|
Diodes Incorporated
|
