| PART |
Description |
Maker |
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CY62157EV18 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| CYRS1049DV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| 5962F1123501QXA CYPT1049DV33-12FZMB CYRS1049DV33-1 |
4-Mbit (512 K 8) Static RAM with RadStop™ Technology
|
Cypress
|
| CY62157EV30LL-45ZSXA CY62157EV30LL-55ZXE CY62157EV |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY62148ELL-55SXA CY62148ELL-45ZSXA CY62148ELL-45ZS |
4-Mbit (512 K x 8) Static RAM Automatic power-down when deselected
|
Cypress Semiconductor
|
| CY62157ELL-45ZSXI CY62157ELL-55BVXE |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| AM41PDS3224DT10IS AM41PDS3224DT100IS AM41PDS3224DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| AM41DL3248GT45IS M41000002S M41000002L |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512亩x 16位），静态存储器
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512x 16位），静态存储器
|
Samsung Semiconductor Co., Ltd.
Advanced Micro Devices, Inc.
|
