| PART |
Description |
Maker |
| DS3050W-100 |
3.3V Single-Piece 4Mb Nonvolatile SRAM with Clock
|
MAXIM - Dallas Semiconductor
|
| 24AA01-/P 24AA01-/SM 24AA02-I/P 24AA02-/P 24AA02-/ |
Serial Number iButton
Single-Piece 256Kb Nonvolatile SRAM
4Kb Plus Time Memory iButton®
1Kb/4Kb Memory iButton®
3.3V Single-Piece 1Mb Nonvolatile SRAM
I2C Serial EEPROM I2C串行EEPROM
|
Toshiba, Corp.
|
| DS2030W-100 |
3.3V Single-Piece 256k Nonvolatile SRAM
|
Maxim Integrated Products
|
| DS3070W-100 DS3070W |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock
|
MAXIM[Maxim Integrated Products]
|
| HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;（不推荐用于新设计）
|
Ecliptek, Corp.
|
| DS3065W-100 DS3065W |
3.3V Single-Piece 8Mb Nonvolatile SRAM with Clock 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PBGA256
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
|
| M58CR064-ZBT M58CR064Q90ZB6T M58CR064CZB M58CR064D |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的16，双行，突发1.8V电源快闪记忆
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动3V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双1616分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics
意法半导
STMicroelectronics N.V.
ST Microelectronics
|
| GS840FH18AGT-8 GS840FH18AT-8.5 GS840FH18AT-8.5I GS |
4Mb Burst SRAMs
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| HSDL-3602-007 HSDL-3602-008 HSDL-3602-037 HSDL-360 |
HSDL-3602-007 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-008 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-037 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-038 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
|
Agilent (Hewlett-Packard)
|
| FSI |
1,00 mm One Piece Interface
|
Samtec, Inc
|
| M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
HDR P R 4P PW N 1X4 .100TQ
BERGSTRIP .100CC SR STRAIGHT
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
|
