| PART |
Description |
Maker |
| IXBH42N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75
|
Infineon Technologies AG
|
| BFR183 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| 2SD2144S 2SD2114K 2SD2114S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
20V,0.5A high-current gain medium power transistor
|
ROHM
|
| BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AD806706 AD8067ARTZ-R2 AD8067ARTZ-REEL AD8067 |
High Gain Bandwidth Product, Precision Fast FET?Op Amp
High Gain Bandwidth Product, Precision Fast FET⑩ Op Amp
High Gain Bandwidth Product, Precision Fast FET?/a> Op Amp
High Gain Bandwidth Product, Precision FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial OP-AMP, 1000 uV OFFSET-MAX, PDSO5
|
Analog Devices, Inc.
|
