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UPD42S16100LLA-A80 - 18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM

UPD42S16100LLA-A80_598592.PDF Datasheet


Part No.	UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17100LG3-A80-7JD UPD42S17100LG3-A80-7KD UPD42S16100LG3-A80-7KD UPD42S16100LG5-A80-7JD UPD42S16100LG5-A80-7KD UPD42S16100LV-A60 UPD42S17100LV-A60 UPD42S17100LV-A80 UPD42S17100LV-A70 UPD42S16100LV-A70 UPD42S16100LLE-A60 UPD42S17100LLE-A60 UPD42S16100LG3-A60-7JD UPD42S16100LG5-A60-7KD UPD42S16100LG5-A60-7JD UPD42S16100LLA-A60 UPD42S16100LLE-A80 UPD42S17100LG3-A70-7JD UPD42S17100LG5-A70-7JD UPD42S17100LG3-A70-7KD UPD42S17100LG5-A70-7KD UPD42S17100LLA-A70 UPD42S16100LLA-A70 UPD42S16100LG3-A70-7KD UPD42S17100LG5-A80-7KD UPD42S17100LG3-A60-7JD UPD42S17100LG5-A60-7JD UPD42S17100LG3-A60-7KD UPD42S17100LG5-A60-7KD
Description	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
File Size	1,966.93K / 38 Page
Maker	TOKO, Inc. EPCOS AG
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Full text search : 18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM

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CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV	36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM	Cypress Semiconductor Corp.
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