| PART |
Description |
Maker |
| ML776H10 ML7XX10 |
InGaAsP-MQW HIGH POWER LASER DIODES
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Mitsubishi Electric Corporation
|
| ML7XX10 ML776H10 |
InGaAsP-MQW HIGH POWER LASER DIODES
From old datasheet system
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NX8510UD61 NX8510UD51 NX8510UD53 NX8510UD55 NX8510 |
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1610 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1510 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1530 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1550 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1570 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1590 nm.
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NEC
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| ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725 |
InGaAsP- MQW FP laser diode
InGaAsP-MQW-FP LASER DIODES
InGaAsP - MQW - FP LASER DIODES
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Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| NX8508CG49-CC NX8508CG47-CC NX8508CG59-CC NX8508BM |
InGaAsP MQW-DFB laser module for 2.5 Gb/s, CWDM application. With SC-UPC connector. Vertical mount flange. Wavelength(typ) 1490 nm.
InGaAsP MQW-DFB laser module for 2.5 Gb/s, CWDM application. With SC-UPC connector. Vertical mount flange. Wavelength(typ) 1470 nm.
InGaAsP MQW-DFB laser module for 2.5 Gb/s, CWDM application. With SC-UPC connector. Vertical mount flange. Wavelength(typ) 1590 nm.
InGaAsP MQW-DFB laser module for 2.5 Gb/s, CWDM application. With SC-UPC connector. Flat mount flange. Wavelength(typ) 1490 nm.
InGaAsP MQW-DFB laser module for 2.5 Gb/s, CWDM application. With SC-UPC connector. Flat mount flange. Wavelength(typ) 1510 nm.
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NEC
|
| KLT231544 |
1310nm InGaAsP strained MQW DFB-LD
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KODENSHI KOREA CORP.
|
| ML774F11F ML776H11F |
InGaAsP - MQW - DFB LASER DIODES
|
Mitsubishi Electric Corporation
|
| NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| NX8563LB429 NX8563LB429-BA NX8563LB429-CA NX8563LB |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块D -波分复用应用
CONVERTER DC-DC 1W 5V/14V DUAL 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
ER 8C 8#12 SKT RECP LINE
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NEC, Corp.
NEC Corp.
NEC[NEC]
|
| KLT-255412 |
1550nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| NX5330SA NX5330SA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
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California Eastern Labs
|
| ML7XX11 ML776H11F ML774F11F |
From old datasheet system
InGaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
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