| PART |
Description |
Maker |
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| VTC4-D22E-12M800 VTC4-D23C-12M800 VTC4-D24A-12M800 |
Voltage Controlled Temperature Compensated Crystal Oscillator TCVCXO, CLIPPED SINE OUTPUT, 12.8 MHz
Voltage Controlled Temperature Compensated Crystal Oscillator TCXO, CLIPPED SINE OUTPUT, 12.8 MHz
Voltage Controlled Temperature Compensated Crystal Oscillator 压控温度补偿晶体振荡
|
Vectron International, Inc.
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
| 1N822 1N822-1 1N822A 1N824 1N824-1 1N824A 1N821-1 |
Bobbins Transformer; Supply Voltage:230V; Power Rating:2.5VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.375"; External Height:0.813"; External Width:1.125"; Frequency:60GHz; Leaded Process Compatible:Yes
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
TRANSF 17VAC .34A FLAT PACK PW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
0TC Reference Voltage Zener 0TC参考电压稳
Cleaning Compound; Dispensing Method:Spray; For Use With:Static Control Mats and Work Surfaces; Volume:1quart (US) RoHS Compliant: NA
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
Coilcraft, Inc.
Microsemi, Corp.
TOKO, Inc.
MICROSEMI[Microsemi Corporation]
|
| HE-TXO-10C1 HE-VTXO-10C1 HE-TXO-10D1 HE-VTXO-10D1 |
TEMPERATURE COMPENSATED OSCILLATOR
|
List of Unclassifed Manufacturers
ETC
|
| MPXV5050G MPX5050 |
MPX5050 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Motorola
|
| TO51913 |
Temperature Compensated Crystal Oscillator
|
Vanlong Technology Co., Ltd.
|
| CPT-18-6037 |
Temperature Compensated Power Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| C2410 |
Temperature Compensated Crystal Oscillators
|
Vectron
|
| C2530 |
Temperature Compensated Crystal Oscillators
|
Vectron
|
