| PART |
Description |
Maker |
| NX5304 NX5304EK NX5304EH |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
California Eastern Labs
NEC[NEC]
NEC Corp.
|
| NX7301CA-CC NX7301BA-CC NX7301BA |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
CEL[California Eastern Labs]
http://
|
| NX7329BB-AA-AZ NX7329BB-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN)
|
CEL[California Eastern Labs]
|
| NX5307 NX5307EH-AZ NX5307EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION 邻舍1310纳米InGaAsP多量子阱中的FP激光可以为2.5 GB的包装二极管/ s的内部办公应
|
California Eastern Laboratories, Inc.
|
| NX7361JB-BC-AZ NX7361JB-BC |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7361JB-BC NX7361JB-BC-AZ |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) 邻舍1310纳米计划生育PULSD InGaAsP多量子阱激光二极管应用浸时域反射计50毫瓦最小包装）
|
California Eastern Laboratories, Inc.
|
| NX5501 NX5501EH-AZ NX5501EK-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
California Eastern Laboratories
|
| NX8508CG61-CC-AZ NX8508 NX8508BM47-CC NX8508BM47-C |
NECs InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX8563LF358-BA NX8563LF318-BA NX8563LB413-BA NX856 |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (10 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7526BF-AA-AZ NX7526BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7526BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
|
California Eastern Laboratories
http://
|
