| PART |
Description |
Maker |
| NX5302EJ |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications.
|
NEC
|
| NX6306GK NX6306SK |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
|
NEC
|
| NX5315EH-AZ NX5315EK-AZ NX5315 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5312 NX5312EH-AZ NX5312EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
|
California Eastern Labs
|
| NX5302 NX5302SK |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS 1310纳米InGaAsP多量子阱FP激光二极管能为光纤通信软件
|
California Eastern Laboratories, Inc.
|
| NX5315 NX5315EH-AZ NX5315EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管能为光纤到户无源光网络应用工具包
|
California Eastern Laboratories, Inc.
|
| NX7361JB-BC |
1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (150 mW min). With FC-UPC connector.
|
NEC
|
| NX7361JB-BC-AZ NX7361JB-BC |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7327BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
|
California Eastern Laboratories
http://
|
| NX8312UD-AZ NX7312UA-AZ NX7313UA-AZ NX7314UA-AZ NX |
Mounting Bracket; Outer Diameter:1.750" RoHS Compliant: Yes 1310长.5 GB的纳 s的InGaAsP多量子阱激光器激光二极管TOSA
Type RB Cylindrical Mounting Clamp
1310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
