| PART |
Description |
Maker |
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| 63S440 |
(63S440 / 63S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
| 53S441 63S441A 63S441 63S440 53S440 53S441A |
(63S440) High Performance 1024 x 4 PROM TiW PROM Family
|
Monolithic
ETC
List of Unclassifed Manufacturers
|
| 8200901JA 8200901LA 82009013X 8200901LX 8200901KX |
x8 PROM x8胎膜早破
Memory, Digital, Bipolar, 64K PROM
|
N/A
|
| PA28F008SC-90 E28F008SC-150 PA28F008SC-170 |
1M X 8 FLASH 3.3V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
1M X 8 FLASH 3.3V PROM, 150 ns, PDSO40
1M X 8 FLASH 3.3V PROM, 170 ns, PDSO44
|
Intel, Corp.
INTEL CORP
|
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| PC28F256J3D-95 PC28F640J3D75A PC28F128J3D75B PC28F |
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64 LEAD FREE, ESBGA-64
4M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
8M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| E28F008S5-90 PA28F008S5-90 |
1M X 8 FLASH 5V PROM, 90 ns, PDSO40 10 X 20 MM, TSOP-40
1M X 8 FLASH 5V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
|
Intel, Corp.
Numonyx Asia Pacific Pte, Ltd.
|
| S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PDSO56
2M X 16 FLASH 3V PROM, 90 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| M39432-12VNC6T M39432-15VNC6T M39432-20VNC6T M3943 |
512K X 8 FLASH 3V PROM, 120 ns, PDSO40
512K X 8 FLASH 3V PROM, 150 ns, PDSO40
512K X 8 FLASH 3V PROM, 200 ns, PDSO40
512K X 8 FLASH 3V PROM, 250 ns, PDSO40
|
STMICROELECTRONICS
NUMONYX
|
|
