| PART |
Description |
Maker |
| K4C89323AF |
DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| DDR110-56T7RL DDR110-XXT7RL DDR110-27T7RL |
10-LINE 56 ohm OTHER TERMINATOR, PDSO24
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH 双倍数据速率终端网络具有禁用开
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
http://
|
| HYB25D256161CE-5 HYB25D256161CE HYB25D256161CE-4 |
16M x 16 Double Data Rate Graphics DRAM
|
INFINEON[Infineon Technologies AG]
|
| M2S56D20AKT M2S56D20ATP M2S56D30AKT M2S56D30ATP M2 |
256M Double Data Rate Synchronous DRAM
|
Elpida Memory
|
| M2S56D20TP M2S56D20TP-10 M2S56D20TP-75 M2S56D30TP- |
256M Double Data Rate Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M13S128168A-5TG |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elite Semiconductor Memory Technology, Inc.
|
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
| MH32D72KLH-10 MH32D72KLH-75 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
2 /415 /919 /104-BIT (33 /554 /432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH32D72KLH-75 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
