| PART |
Description |
Maker |
| K7J641882M |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
|
Samsung semiconductor
|
| K7I643684M-FCI16 K7I641884M-FCI16 K7I641884M-FCI20 |
72Mb DDRII SRAM Specification
|
Samsung semiconductor
|
| GS8644Z18 GS8644Z18E-200I GS8644Z18E-225 GS8644Z18 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC[ETC]
GSI Technology
|
| GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
| K7I163682B06 K7I161882B |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1QLA7236ABB |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7I643682M07 K7I641882M |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1QEA7236ABG R1QBA7236ABG R1QBA7218ABG R1QBA7236AB |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| GS8662Q08E-167 GS8662Q08E-250 GS8662Q08E-300I GS86 |
72Mb SigmaQuad-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
