| PART |
Description |
Maker |
| KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3N6VU1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| AS6C3216 |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Memory
|
| KM23V32005BG |
32M-Bit (4Mx8/2Mx16) COMS MASK ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAMA82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位4Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
