| PART |
Description |
Maker |
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| AB28F200BX-T90 A28F200BX-B AB28F200BX-B90 |
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
JT 6C 6#12 PIN RECP
A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY A28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel Corporation
Intel Corp.
SCHURTER AG
|
| E28F002BL-T150 28F200BL-TB PA28F200BL-T150 E28F200 |
2-MBIT (128K x 16/ 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 256K X 8 FLASH 12V PROM, 150 ns, PDSO40
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| CY14E102L-BA45XCT CY14E102N-BA45XCT CY14E102L-ZS25 |
2-Mbit (256K x 8/128K x 16) nvSRAM
|
Cypress Semiconductor
|
| A28F200BR-TB AB28F200BR-T80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| SST29EE020-150-4C-EH SST29LE020-250-4C-EH SST29VE0 |
x8 EEPROM
4 Mbit (512K x 8/256K x 16) nvSRAM x8的EEPROM
1 Mbit (128K x 8) nvSRAM x8的EEPROM
|
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
|
| IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水
TV 6C 6#12 SKT WALL RECP
Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
IDT
Integrated Device Technology, Inc.
|
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS
5V, 3.3V, ISR™ High-Performance CPLDs
NX2LP DEVELOPMENT KIT
KIT DEV MOBL-USB FX2LP18
MoBL® 4-Mbit (256K x 16) Static RAM
MoBL® 1-Mbit (64K x 16) Static RAM
MoBL® 1 Mbit (128K x 8) Static RAM
MoBL® 2-Mbit (128K x 16) Static RAM
(ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms
MoBL® 1-Mbit (64K x 16) Static RAM EEPROM
5V, 3.3V, ISR™ High-Performance CPLDs EEPROM
MoBL® 4-Mbit (256K x 16) Static RAM EEPROM
5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5，联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| CY7C1041CV33-12ZSXE CY7C1041CV3308 CY7C1041CV33-10 |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 10 ns, PDSO44
4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor, Corp.
|
| CYD09S72V CYD18S72V |
FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM(FLEx72 3.3V 64K/128K/256K x 72同步双端口RAM)
|
Cypress Semiconductor Corp.
|
