| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| MRF21125S MRF21125 MRF21125SR3 |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道：漏电流3A, 漏源电压20V，导通电.06Ω；P沟道：漏电流-2A, 漏源电压-20V，导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MRF6S19100HR308 MRF6S19100HSR3 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
Freescale Semiconductor...
|
| MRF7S15100HR309 MRF7S15100HSR3 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
Freescale Semiconductor, In...
|
| MRFE6VP5600HR611 MRFE6VP5600HR5 |
RF Power Field Effect Transistors
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
|
Freescale Semiconductor, Inc
|
| MRF6P23190H08 MRF6P23190HR6 |
RF Power Field Effect Transistor
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
|
| SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| TO-263 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
| MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK699 |
N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR N通道MOS场效应功率晶体管
|
ETC
NEC, Corp.
|
