| PART |
Description |
Maker |
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
| SLD-3091FZ |
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| AN1228 |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE
|
SGS Thomson Microelectronics
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| HN7G02FU |
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| MPSW51_D MPSW51A ON2354 MPSW51 |
*Motorola Preferred Device
One Watt High Current Transistors(PNP Silicon)
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
