| PART |
Description |
Maker |
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash
|
Hynix Semiconductor
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CA20C03A20EP CA20C03A-20IP CA20C03A-20IN CA20C03A2 |
N-CHANNEL 550V @Tjmax - 2.5 Ohm - 3A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
Dual 2-input NAND gate
DUAL 2-INPUT OPEN DRAIN NAND GATE
Dual bilateral switch
8-bit MCU with Flash or ROM memory, ADC, two 16-bit timers, I2C, SPI, SCI interfaces
8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, timers, SPI 数据加密处理
ST7LITE2 - 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI 数据加密处理
Dual 2-input exclusive OR gate 数据加密处理
|
Belden, Inc.
3M Company
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9NBG08U5A |
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9K8G08U0B-PIB0000 |
1G x 8 / 2G x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9F6408U0C-V |
8M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F6408U0M-TCB0 K9F6408U0M-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29U64000IT KM29U64000T |
8M x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
