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K7K1636U2C - 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

K7K1636U2C_810910.PDF Datasheet
 Full text search : 512Kx36 & 1Mx18 DDRII CIO b2 SRAM
 Product Description search : 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

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PART Description Maker
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- 512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
 Samsung semiconductor
IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236 1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
 Integrated Silicon Solution, Inc
K7Q161862 K7Q161862B K7Q163662B 512Kx36 & 1Mx18 QDRTM b2 SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
K7N161831B K7N163631B K7N163631B-QFCI25 K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
 SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
IS61QDP2B251236A IS61QDP2B251236A1 IS61QDP2B251236 512Kx36 and 1Mx18 configuration available
 Integrated Silicon Solu...
KM718V089 KM736V989 512Kx36 & 1Mx18 Synchronous SRAM
 SAMSUNG SEMICONDUCTOR CO. LTD.
K7N163631B-QC16 K7N163631B-QFCI25 K7M161835B-QC65 512Kx36 & 1Mx18 Pipelined NtRAM
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
K7N163601M K7N161801M 512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
 SAMSUNG[Samsung semiconductor]
K7N161801M K7N163601M 512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
 SAMSUNG SEMICONDUCTOR CO. LTD.
 
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