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UPD4264405G5-A50-7JD - 2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM

UPD4264405G5-A50-7JD_461907.PDF Datasheet

 
Part No. UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65405LE-A50 UPD4264405LE-A50 UPD4265405LE-A50
Description 2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM

File Size 1,283.28K  /  33 Page  

Maker

Omron Electronics, LLC



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 Full text search : 2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM


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