| PART |
Description |
Maker |
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| E28F640J3A-120 |
IC,EEPROM,FLASH,4MX16/8MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
| HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
| TC58FVM6T2A TC58FVM6B2A |
Flash - NOR
8Mx8 / 4Mx16 ; TSOP-I-48,TFBGA ;; Speed = 65ns/25ns Page ;; VCC = 2.7-3.6 ;; Read Icc Max (mA) = 55 ;; Standby Icc Max (uA) = 10 ;; Boot Block = Top ;;
|
TOSHIBA
|
| A25LQ64 |
64M-BIT (x1 / x2 / x4) 3.3V CMOS MXSMIO
|
AMIC Technology
|
| MX25L6406EM2I12G MX25L6406EMI12G MX25L6406EZNI12G |
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| MX29LV065M |
64M-Bit CMOS Flash Memory
|
Macronix
|
| TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| MX29LV065 |
64M-Bit CMOS Flash Memory
|
Macronix
|
| TC58V64FT |
64mb CMOS EePROM: 8mx8
|
TOSHIBA
|
