| PART |
Description |
Maker |
| M27V322 7067 M27V322-100B1 M27V322-100F1 M27V322-1 |
From old datasheet system
32 MBIT (2MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
STMicroelectronics
|
| M29KW032E90ZA6T M29KDCL3-32T M29KW032E M29KW032E11 |
From old datasheet system
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory
32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory
32 MBIT (2MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W432-ZAT M36W432B85ZA1T M36W432B70ZA1T M36W432T |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，开机区块快闪记忆体兆位256K x16的SRAM，多个存储产
|
STMicroelectronics N.V.
意法半导
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
| M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88
128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
|
STMICROELECTRONICS
ST Microelectronics
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| 27C160 M27C160 M27C160-100B1 M27C160-100B1TR M27C1 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM 16兆位Mb x8兆x16紫外线存储器和OTP存储
IC BUFF/DRVR 16BIT 3ST 48-TSSOP 16兆位Mb x81兆x16紫外线存储器和OTP存储
16-Bit Transparent D-Type Flip-Flop 16兆位Mb x8兆x16紫外线存储器和OTP存储
IC ADRSS DRVR REG 1-4BIT 56TSSOP 16兆位Mb x8兆x16紫外线存储器和OTP存储
16-Bit Bi-directional Bus Transceiver
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M36W432-ZAT M36W432BZA M36W432T85ZA1T M36W432T85ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
| M27C4002-70N1X M27C4002-70N1TR M27C4002-70XJ1X M27 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM 4兆位56Kb的16）紫外线存储器和OTP存储
|
意法半导
STMicroelectronics N.V.
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
