| PART |
Description |
Maker |
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
|
OKI SEMICONDUCTOR CO., LTD.
|
| MT55L512V18F MT55L256V32F MT55L256V36F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
| MT55L512L18P MT55L256L36P |
8Mb ZBT SRAM
|
MICRON[Micron Technology]
|
| XCR3512XL-7PQ208I XCR3512XL XCR3512XL-10FT256I XCR |
XCR3512XL: 512 Macrocell CPLD EE PLD, 10 ns, PBGA324
XCR3512XL: 512 Macrocell CPLD EE PLD, 7.5 ns, PQFP208
XCR3512XL: 512 Macrocell CPLD EE PLD, 10 ns, PBGA256
XCR3512XL: 512 Macrocell CPLD
|
XILINX INC
Xilinx, Inc.
XILINX[Xilinx, Inc]
|
| 80546KF |
64 Bit Processor
64-bit Intel Xeon Processor MP with up to 8MB L3 Cache
64-bit Intel Xeon Processor MP with up to 8MB L3 Cache 64位Intel Xeon处理MP的高MB三级高速缓
|
Intel Corp.
Intel, Corp.
|
| ID243G01 ID242G01 |
8MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| ID244K01 |
8MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| DS3065WP-100IND DS3065WP |
3.3V, 8Mb, Nonvolatile SRAM with Clock
|
Maxim Integrated Products
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
