| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBX55N300 |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| 2EX103K1 |
High Voltage Capacitors Monolithic Ceramic Type
|
Semtech
|
| LT3512HMSPBF LT3512EMSPBF LT3512IMSPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| A2460 |
Monolithic High Voltage MOSFET and IGBT Driver
|
Alpha Microelectronics
|
| LT3511HMSPBF LT3511HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
