| PART |
Description |
Maker |
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| K9K8G08U1E |
4Gb E-die NAND Flash
|
Samsung
|
| DOM40K3R1.5G DOM40K3R032 DOM40K3R512 DOM40K3R096 |
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TS2GMP820 |
2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
8 Megabit (1M x 8), 5 Volt-only, Flash Memory
IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC
From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
| AM7202A-30/BXA AM7202-80JC AM7202-80RC AM7202-80DC |
45NS, PLCC, IND TEMP(FLASH)
55NS, VSOP, IND TEMP(FLASH)
55NS, TSOP, IND TEMP(FLASH)
120NS, PLCC, COM TEMP(FLASH)
120NS, PLCC, IND TEMP(FLASH)
x9 Asynchronous FIFO X9热卖异步FIFO
55NS, PLCC, IND TEMP(FLASH) X9热卖异步FIFO
45NS, TSOP, IND TEMP(FLASH) X9热卖异步FIFO
|
Weidmuller, Corp.
Rochester Electronics, LLC
|
| E28F008S5-90 PA28F008S5-90 |
1M X 8 FLASH 5V PROM, 90 ns, PDSO40 10 X 20 MM, TSOP-40
1M X 8 FLASH 5V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
|
Intel, Corp.
Numonyx Asia Pacific Pte, Ltd.
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
|
