| PART |
Description |
Maker |
| NESG260234 NESG260234-T1 |
3-PIN POWER MINIMOLD
|
NEC[NEC]
|
| NESG270034-T1 NESG270034-AZ NESG270034-T1-AZ NESG2 |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
|
CEL[California Eastern Labs]
|
| 2SC4703-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
California Eastern Labs
|
| 2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics
NEC
|
| FA1A4ZL69-T1B FA1A4ZL67-T1B FA1A4ZL68-T1B |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
3M Company
|
| 2SC4957-15 2SC4957-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
|
Renesas Electronics Corporation
|
| 2SC4227-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
|
Renesas Electronics Corporation
|
| NEC66219 2SC5606-T1-A 2SC5606-A |
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
California Eastern Labs
|
| NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M |
NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
|
NEC
|
| 2SC4703 2SC4703-T1 2SC4703-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
