| PART |
Description |
Maker |
| CY7C1383F-133BZI CY7C1381D-100AXC CY7C1381D-100BZX |
18-Mbit (512 K x 36/1 M x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| CY7C1381D-133AXI CY7C1381D-100AXC CY7C1381D-100BZI |
18 Mbit (512 K ? 36/1 M ? 18) Flow Through SRAM
18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM
|
Cypress Semiconductor
|
| CY7C1361C-133AJXCT |
9-Mbit (256 K 36/512 K 18) Flow-Through SRAM
|
Cypress
|
| 16299 16299-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, C X-FLOW, .4H LOW FLOW, THREADED
HTSNK C X-FLOW .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
| CY7C1381B-83AC |
512 36/1M 18 Flow-Thru SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| IDT72V70200 72V70200_DS_72847 IDT72V70200PQF IDT72 |
512 x 512 TSI, 16 I/O at 2Mbps, 3.3V
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
Sharp Corporation
Sharp, Corp.
|
| IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through
128K x 32 Flow Through SyncBurst SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| 17572 17572-G |
HTSNK. B X-FLOW. .9H LOW FLOW. THRU HOLE HTSNKB型X流0.9 低流量。通孔
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| 15985 15985-8 |
HTSNK, B X-FLOW. .911 LOW FLOW. THREADED HTSNK，B型X流0.911低流量。螺
HTSNK B X-FLOW. .911 LOW FLOW. THREADED
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
