| PART |
Description |
Maker |
| KIT5003A |
high prefomance transmissive type photo interrupter, combines high-output GaAs IRED with high sensitive phototransistor.
|
KODENSHI KOREA CORP.
|
| TC1501 |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLL400IK-2C |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E090IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| AS193-73 |
PHEMT GaAs IC High Linearity 3 V Control SPDT Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路高线3 V控制0.1-2.5 GHz的SPDT开
PHEMT GaAs IC High Linearity 3 V Control SPDT Switch 0.1?.5 GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| FLL21E060IY |
High Power GaAs FET
|
Eudyna Devices
|
| HMC132 |
GaAs MMIC HIGH-ISOLATION
|
Hittite Microwave Corporation
|
| FLL1500IU-2C |
L-Band High Power GaAs FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
