| PART |
Description |
Maker |
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| A-DF15PP-WP-R |
WATERPROOF DSUB CONNECTOR
|
Assmann Electronics Inc.
|
| A-DS25PP-WP-R |
WATERPROOF DSUB CONNECTOR
|
Assmann Electronics Inc.
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
| DOM44KR032 HFDOM44KR192 DOM44KR016 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
| GB164AHGABMLA-V01 GB164AHYBAMUA-V01 GB164AHYBANLB- |
FUSE,RESETTABLE,9.00A-H, 18.00A-T,40A-M,30VDC
CONN,F-RIGHT ANGLE, PC MOUNT,JACK(0.90"BARREL)
SWITCH,SUBMIN TOG,SPDT,ON-0N R/A PCB MOUNT,48VAC/50mA,3 PIN
CONNECTOR,BNC,FEMALE ,R/A PLASTIC INSULATION,PC MOUNT
CONN,DSUB,.318",R/A,DB-9M, W/O JACK SCREW,TIN CONTACTS
IC,EDE2008/P,PUSH BUTTON DEBOUNCER,DIP-18
RELAY,SOLID STATE,DC/AC IN:3-32VDC,OUT:24-240VAC
PLIER,SQ.NOSE,4 3/4" w/CUTTER SERRATED JAW,SPRING LOADED,UNS 规格液晶模块
PROGRAMMER,UNIVERSAL, 48PIN ZIF, USB 2.0 INTERFACE 规格液晶模块
CONN,DSUB,.318",R/A,DB-9M, W/O JACK SCREW,TIN CONTACTS
|
Jewel Hill Electronic Co., Ltd.
|
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
| HY5PS1G431LF-C4 HY5PS1G431LF-C5 HY5PS1G831LF-C4 HY |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| H26M11001BAR |
1GB e-NAND
|
Hynix
|
| TS1GJF110 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| H5TC1G83EFRPBA H5TC1G83EFRPBI H5TC1G63EFRPBA H5TC1 |
1Gb DDR3L SDRAM
|
Hynix Semiconductor
|
|
