| PART |
Description |
Maker |
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五（巴西）总裁|37
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2SC2059KM 2SC2059KN 2SC2059KP 2SC4099P 2SC4099M 2S |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-70 晶体管|晶体管|叩| 20V的五（巴西）总裁| 20mA的一（c）|的SC - 70
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-323
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-59
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SC-59
|
Vishay Intertechnology, Inc.
|
| SVT200-5C SVT250-5C SVT350-5C SVT450-5C SVT400-5C |
Silicon Bridge Rectifiers
Fast Recovery Bridge Rectifiers
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 5A I(C) | TO-3
晶体管|晶体管|叩| 350V五（巴西）总裁| 5A条一c）|3
晶体管|晶体管|叩| 300V五（巴西）总裁| 5A条一c）|3
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 10A条一（c）|
|
Jameco Electronics
|
| ECG340 ECG330 ECG330W ECG331 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-92VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 15A I(C) | TO-220
|
|
| CD965S CO39N CIL455 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|叩| 160V五（巴西）总裁| 1A条一（c）|2
|
Princeton Technology, Corp.
|
| NE052025-28 NE050214E12 NEM054029-28 NEM054029-12 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 400MA I(C) | TO-39
TRANSISTOR | BJT | NPN | 6A I(C) | SOT-119VAR
TRANSISTOR | BJT | NPN | 10A I(C) | SOT-119VAR
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2.2A I(C) | RFMOD 晶体管|晶体管|叩| 18V的五（巴西）总裁| 2.2AI（丙）| RFMOD
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2.2A I(C) | STX-M4 晶体管|晶体管|叩| 18V的五（巴西）总裁| 2.2AI（丙）|希捷M4
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 3A I(C) | STX-M4 晶体管|晶体管|叩| 18V的五（巴西）总裁| 3A条一（c）|希捷M4
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 750MA I(C) | RFMOD 晶体管|晶体管|叩| 12V的五（巴西）总裁| 750mA电流一（c）| RFMOD
TRANSISTOR | BJT | NPN | 3A I(C) | STX-M4 晶体管|晶体管|叩| 3A条一（c）|希捷M4
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 750MA I(C) | RFMOD 晶体管|晶体管|叩| 12V的五（巴西）总裁| 750mA电流一c）| RFMOD
|
Alpha Industries, Inc.
NXP Semiconductors N.V.
Vicor, Corp.
|
| 2SD2402 2SD2402EX 2SD2402EZ 2SD2402EY |
NPN epitaxial type silicon transistor
TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-243
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 5A I(C) | TO-243
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 2SD2402数据表|数据表[04/2002]
|
nec
Dialight PLC
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
