| PART |
Description |
Maker |
| IRL3803L IRL3803S |
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）\u003d 0.006ohm，身份证\u003d律目140A?）
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?)
POWER MOSFET(VDSS=30V, RDS(ON)=0.006OHM, ID=140Aㄌ)
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFP054N |
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A)
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?)
IC/71054 24P P DIP INTERFACE 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.012ohm，身份证\u003d 81A条?
|
IRF[International Rectifier]
Power MOSFET
International Rectifier, Corp.
|
| IRF840S IRF840STRR IRF840STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
|
IRF[International Rectifier]
|
| IRF520N |
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET（减振钢板基本\u003d 100伏，的Rds（on）\u003d 0.20欧姆，身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
|
International Rectifier, Corp.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFP064N IRFP064NPBF |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?)
|
IRF[International Rectifier]
Power MOSFET
|
| IRFIBC40G IRFIBC40 IRFIBC40GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=3.5A)
|
IRF[International Rectifier]
|
| IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A )
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
|
International Rectifier
|
