| PART |
Description |
Maker |
| 25M02GVTBIG 25M02GVTBIT 25M02GVTCIG 25M02GVTCIT 25 |
3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS
|
Winbond
|
| CS-514-4DW24 CS-514-2DW18 CS-514-6DW28 CS-514-6FN2 |
4-Channel Disk/Tape Read/Write Circuit
6通道写电
4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
6-Channel Read/Write Circuit
|
Glenair, Inc.
|
| AD7782BRU AD7782 |
High Resolution Analog-to-Digital Converters Feature a Simple Interface
Read Only/ Pin Configured 24-Bit ADC
Read Only, Pin Configured 24-Bit ADC
|
AD[Analog Devices]
|
| FM93C56EM8 FM93C56LMT8 FM93CS56LMT8 FM93CS56LEM8 F |
(MICROWIRE??Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
RES, 0603, SMD, 0.1%, TKF 11.8K
(MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
2048-Bit Serial CMOS EEPROM With Data Protect and Sequential Read(带连续读操作和数据保护的2048位串行CMOS EEPROM)
(MICROWIRE?/a> Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE?Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
|
| EVAL-AD7783EB AD7783 AD7783BRU AD7783BRU-REEL AD77 |
Single-Channel, Read-Only, Pin-Configured, 24-bit Sigma-Delta A/D Converter with Switchable Current Sources
Read-Only, Pin Configured 24-Bit ADC with Excitation Current Sources
|
AD[Analog Devices]
|
| SSI32R510AR-6CP SSI32R510AR-6CH SSI32R510AR-6CL SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Electronic Theatre Controls, Inc.
|
| BH6625FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read / Write amplifier for FDD
|
ROHM[Rohm]
|
| BH6626FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
|
ROHM[Rohm]
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| SSI32R2300R-2CN SSI32R2301-4CL |
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
California Micro Devices Corporation
Samsung Semiconductor Co., Ltd.
|
| CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| NM93CS56 |
(MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE⑩ Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
