| PART |
Description |
Maker |
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| AM1214-100 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MS2604 |
RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd.
|
| AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
|
| HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BLL6H1214-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLL6H1214LS-250 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier
|
Philips Semiconductors
|
| BLS6G3135S-120 BLS6G3135-120 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
