| PART |
Description |
Maker |
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| CUS15S30 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
| SB706D-40 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS392 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| DSR05S30CTB |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| DSR07S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| SCS40STN |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SCS0240DF SCS0240DF-15 |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| SSM5H08TU |
Silicon Epitaxial Schottky Barrier Diode DC-DC Converter
|
Toshiba Semiconductor
|
| SCS521DS |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RB161L-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
