| PART |
Description |
Maker |
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| 1SS388 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
|
Pan Jit International Inc.
|
| MA721WS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS321 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SSM6G18NU |
Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 1SS315 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SCS40STN |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RB551V-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RB521S-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|