| PART |
Description |
Maker |
| SBT80-06GS |
60V, 8A Rectifi er
|
Sanyo Semicon Device
|
| SBT80-10GS |
100V, 8A Rectifi er
|
Sanyo Semicon Device
|
| APT30DL60BCT APT30DL60BCTG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT150DL60B2 APT150DL60B2G |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| CPD34X CPD31X |
10A, 60V Schottky Rectifi er Die
|
Central Semiconductor Corp
Central Semiconductor C...
|
| NSD |
Surface Mount Schottky Barrier Rectifi er Diode
|
NIC-Components Corp.
|
| CMR1U-02FLSERIES |
1.0A, 200V, 400V and 600V Ultra Fast Recovery Rectifi ers in the SMBFL package
|
Central Semiconductor Corp
|
| CHF5KP30A CHF5KP50A CHF5KP110CA MSC0997 CHF5KP65A |
Patented Flip Chip Series
FLIP CHIP TVS DIODES
From old datasheet system
Transient Voltage Suppressor 瞬态电压抑制器
5000 W, BIDIRECTIONAL, SILICON, TVS DIODE FLIP CHIP-2
|
MICROSEMI[Microsemi Corporation]
Atmel, Corp.
Microsemi, Corp.
Vishay Intertechnology, Inc.
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| TPCP8F01 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
